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1. product profile 1.1 general description 30 w ldmos 2-stage power mmic for base st ation applications at frequencies from 860 mhz to 960 mhz. available in gull wing for surface mount (sot822-1) or flat lead (sot834-1). [1] test signal: 3gpp; test model 1; 64 dpch; par = 7 db at 0.01 % probability on ccdf per carrier; carrier spacing 10 mhz. 1.2 features and benefits ? typical 2-carrier w-cdma performance at a frequency of 940 mhz: ? average output power = 2 w ? gain = 29 db (typ) ? efficiency = 11.5 % ? imd3 = ? 48.5 dbc ? acpr = ? 52 dbc ? integrated temperature compensated bias ? excellent thermal stability ? biasing of individual stages is externally accessible ? integrated esd protection ? small component size, very su itable for pa size reduction ? on-chip matching (input matched to 50 ? , output partially matched) ? high power gain ? designed for broadband operation (860 mhz to 960 mhz) BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic rev. 2 ? 1 march 2011 product data sheet table 1. application information typical rf performance at t h = 25 ? c. mode of operation f v ds p l(av) g p ? d imd3 acpr (mhz) (v) (w) (db) (%) (dbc) (dbc) 2-carrier w-cdma f 1 = 935; f 2 = 945 28 2 29 11.5 ? 48.5 [1] ? 52 [1] caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 2 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 2. pinning information 2.1 pinning 2.2 pin description transparent top view fig 1. pin configuration BLM6G10-30 BLM6G10-30g gnd gnd v ds1 n.c. n.c. n.c. n.c. rf input rf output/v ds2 n.c. v gs1 v gs2 n.c. v ds1 gnd gnd 001aak500 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 table 2. pin description pin description 1, 11, 12, 16 ground 2v ds1 3, 4, 5, 7, 13, 15 n.c. 6r f _ i n p u t 8v gs1 9v gs2 10 v ds1 14 rf_output/v ds2 flange rf_ground
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 3 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 3. ordering information 4. block diagram 5. limiting values 6. thermal characteristics [1] thermal resistance is determined under specific rf operating conditions. table 3. ordering information type number package name description version BLM6G10-30 - hsop16f: plastic, heatsink small outline package; 16 leads (flat) sot834-1 BLM6G10-30g - hsop16: plastic, heatsink small outline package; 16 leads sot822-1 fig 2. block diagram of BLM6G10-30 and BLM6G10-30g rf_output/v ds2 v ds1 rf_input v gs1 2 14 6 8 9 v gs2 temperature compensated bias 001aan771 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage 0 +13 v i d1 first stage drain current - 3 a i d2 second stage drain current - 9 a t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c table 5. thermal characteristics symbol parameter conditions value unit r th(j-c)1 first stage thermal resistance from junction to case t case = 80 ?c; p l =2w; 2-carrier w-cdma [1] 7.5 k/w r th(j-c)2 second stage thermal resistance from junction to case t case = 80 ?c; p l =2w; 2-carrier w-cdma [1] 2.3 k/w
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 4 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 7. characteristics 8. application information 8.1 ruggedness the blmg10-30 and BLM6G10-30g are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; i dq1 = 105 ma; i dq2 = 288 ma; p l = 30 w (cw). 8.2 impedance information [1] device input impedance as measured from gate to ground. [2] test circuit impedance as measured from drain to ground. table 6. characteristics mode of operation: 2-carrier w-cdma; par 7 db at 0.01 % probability on ccdf; 3gpp test model 1; 1-64 pdpch; f 1 = 922.5 mhz; f 2 = 932.5 mhz; f 3 = 947.5 mhz; f 4 = 957.5 mhz; v ds =28v; i dq1 = 105 ma; i dq2 = 250 ma; t h = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit p l(av) average output power - 2 - w g p power gain p l(av) = 2 w 27 29 31 db rl in input return loss p l(av) = 2 w - ? 15 ? 12 db ? d drain efficiency p l(av) = 2 w 10 11.5 - % imd3 third-order intermodulation distortion p l(av) = 2 w - ? 48.5 ? 45 dbc acpr adjacent channel power ratio p l(av) = 2 w - ? 52 ? 48.5 dbc table 7. typical impedance f z i [1] z l [2] mhz ? ? 850 43.6 ? j0 3 ? j0.8 860 43.5 ? j0.25 3.2 ? j0.7 880 43.4 ? j0.4 3.4 ? j0.5 900 43.4 ? j0.6 3.5 ? j0.2 920 43.5 ? j0.9 3.45 ? j0 940 43.6 ? j1.3 3.2 ? j0.1 960 43.6 ? j1.7 3 ? j0.1 980 43.6 ? j2 2.7 ? j0.1
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 5 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 8.3 performance curves performance curves are measured in a BLM6G10-30g application circuit. t case = 25 ? c; v ds = 28 v; p l(av) =2w; i dq1 = 105 ma; i dq2 = 288 ma; carrier spacing = 10 mhz. t case = 25 ? c; v ds = 28 v; p l(av) =2w; i dq1 =105ma; i dq2 = 288 ma; carrier spacing = 10 mhz. fig 3. 2-carrier w-cdma power gain and drain efficiency as function of frequency; typical values fig 4. 2-carrier w-cdma adjacent channel power ratio (5 mhz) and adjacent channel power ratio (10 mhz) as function of frequency; typical values v ds = 28 v; i dq1 = 105 ma; i dq2 = 288 ma; f = 940 mhz; carrier spacing = 10 mhz. (1) t case = ?30 ? c (2) t case = 25 ? c (3) t case = 85 ? c v ds = 28 v; i dq1 =105ma; i dq2 = 288 ma; f = 940 mhz; carrier spacing = 10 mhz. (1) t case = ? 30 ? c (2) t case = 25 ? c (3) t case = 85 ? c fig 5. 2-carrier w-cdma power gain and drain efficiency as function of average output power and temperature; typical values fig 6. 2-carrier w-cdma adjacent power channel ratio and third order intermodulation distortion as function of average output power and temperature; typical values 001aak501 f (mhz) 880 1000 960 920 29 31 27 33 35 g p (db) 25 9 11 7 13 15 d (%) 5 g p d 001aak502 f (mhz) 880 1000 960 920 ?50 ?52 ?48 ?46 imd3, acpr (dbc) ?54 imd3 acpr 001aak503 28 26 24 32 30 36 34 g p (db) 22 24 16 8 40 32 56 48 d (%) 0 p l(av) (w) 10 ?1 10 2 10 1 g p g p (1) (2) (3) (1) (2) (3) g p d 001aak504 ?40 ?50 ?30 ?20 g p (db) ?60 p l(av) (w) 10 ?1 10 2 10 1 (3) (2) (1) acpr (3) (2) (1) imd3
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 6 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic i dq1 =105ma; i dq2 = 288 ma. (1) f = 940 mhz; v ds = 24 v (2) f = 940 mhz; v ds = 28 v (3) f = 940 mhz; v ds = 32 v (4) f = 880 mhz; v ds = 24 v (5) f = 880 mhz; v ds = 28 v (6) f = 880 mhz; v ds = 32 v i dq1 = 105 ma; i dq2 = 288 ma; f 1 = 940 mhz; f 2 = 940.1 mhz. fig 7. one-tone cw power gain as function of output power and drain-source voltage; typical value fig 8. two-tone cw intermodulation distortion as function of peak envelope load power; typical value test signal: is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 to 13). par = 9.7 db at 0.01 % probability on the ccdf. (1) t case = ?30 ? c (2) t case = 25 ? c (3) t case = 80 ? c fig 9. single-carrier peak output power (peaks 3 db compressed) as function of frequency and temperature; typical values p l (w) 70 50 10 60 40 20 030 001aak505 27 25 23 29 31 g p (db) 21 (1) (2) (3) (4) (5) (6) 001aak506 ?60 ?70 ?80 ?40 ?50 ?20 ?30 imd (dbc) ?90 p l(pep) (w) 10 ?1 10 2 10 1 imd3 imd5 imd7 f (mhz) 820 1000 940 880 001aak507 20 40 60 p l(m) (w) 0 (1) (2) (3)
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 7 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 8.4 application circuit fig 10. class-ab application circuit 001aan772 blm6g1030 board 3 dev rev1
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 8 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic [1] american technical ce ramics type 100a or capacitor of same quality. see table 8 for list of components. fig 11. component layout for class-ab application circuit table 8. list of components for application circuit, see figure 11 . printed-circuit board (pcb): rogers 4350b; ? r = 3.5 f/m; thickness = 0.762 mm; cu (top/bottom metallization). component description value remarks c1, c2, c5, c13, c16 multilayer ceramic chip capacitor 100 nf c3, c4, c14, c17 multilayer ceramic chip capacitor 4.7 ? f; 50 v c6, c12, c15 multilayer ce ramic chip capacitor 68 pf [1] c7 electrolytic capacitor 220 ? f; 35 v c8, c9 multilayer cerami c chip capacitor 11 pf [1] c10, c11 multilayer cera mic chip capacitor 4.3 pf [1] c18 electrolytic capacitor 470 ? f; 35 v r1 smd resistor 1.5 k? r2 smd resistor 3.3 k? 001aan773 blm6g1030 board 3 dev rev1 c4 c6 c8 c14 c13 c18 v ds2 c12 c9 c10 c11 s1 c2 c3 c1 r2 r1 c5 c7 c17 c16 c15 v ds1 v gs1 v gs2
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 9 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 9. test information [1] american technical ce ramics type 100a or capacitor of same quality. striplines are on a rogers 4350b printed-circuit board (pcb) with ? r = 3.5; thickness = 0.762 mm. see table 9 for a list of components. fig 12. component layout for 860 mhz to 960 mhz circuit for 2-carrier w-cdma table 9. list of components for test circuit see figure 12 . component description value remarks c1, c2, c13, c14 multilayer ceramic ch ip capacitor 4.7 ? f tdk4532x7r1e475mt020u c3, c4, c5, c11, c12 multilayer ceramic chip capacito r 100 nf murata x7r or equivalent c6, c9, c10 multilayer cera mic chip capacitor 68 pf [1] c7, c8 multilayer cerami c chip capacitor 11 pf [1] c15 multilayer ceramic chip capacitor 6.2 pf [1] c16 multilayer ceramic chip capacitor 5.1 pf [1] c17, c18 electrolytic capacitor 220 ? f; 63 v r1 smd resistor 1.5 k ? r2 smd resistor 3.3 k ? s1 short piece of copper foil 001aan774 blm6g1030 board 3 jsh rev2 c1 c6 c7 c13 c11 c18 v ds2 v ds2 c9 c8 c15 c16 s1 c5 c2 c3 r2 r1 c4 c17 c14 c12 c10 v ds1 v gs1 v gs2 v ds1
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 10 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 10. package outline fig 13. package outline sot834-1 references outline version european projection issue date iec jedec jeita sot834-1 sot834-1_po 03-10-22 10-10-20 unit (1) mm max nom min dimensions note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. v a y w w b p (10) w hsop16f: plastic, heatsink small outline package; 16 leads (flat) sot834-1 e 3 (2) 12 16 11 1 x e c d e 2 e 1 (6) (2) e 2 (4) d 2 z b p2 b p1 (5) d 1 h e e 1 a e pin 1 index 0 5 10 mm scale 0.43 0.28 0.32 0.23 16.0 15.8 13.0 12.6 1.1 0.9 11.1 10.9 6.2 5.8 2.9 2.5 1.02 1.37 16.2 15.8 1.7 1.5 a 2 b p b p1 1.09 0.94 5.87 5.72 3.5 3.2 b p2 cd (1) d 1 0.25 wyz d 2 e (1) e 1 e 2 ee 1 e 2 5.69 e 3 3.81 0.1 2.5 2.0 h e q 1 0.25 v detail x q 1 a 2
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 11 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic fig 14. package outline sot822-1 references outline version european projection issue date iec jedec jeita sot822-1 sot822-1_po 07-02-08 10-10-20 unit (1) mm max nom min 3.6 0.2 0 0.35 0.06 ?0.06 0.43 0.28 1.09 0.94 5.87 5.72 0.32 0.23 16.0 15.8 13.0 12.6 1.1 0.9 11.1 10.9 1.02 1.37 a dimensions note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included a 1 a 2 3.5 3.2 a 3 a 4 b p b p1 3.81 e 3 h e l p b p2 cd (1) d 1 d 2 e (1) e 1 6.2 5.8 e 2 2.9 2.5 14.5 13.9 1.1 0.8 ee 1 5.69 e 2 sot822-1 hsop16: plastic, heatsink small outline package; 16 leads y d a va x e c e 2 h e b p (10) w w 11 16 1 pin 1 index e 1 d 2 e 3 (2) e 1 (2) e 2 (4) e (6) b p2 b p1 (5) d 1 12 z 0.1 2.5 2.0 8 0 yz 0.25 v 0.25 w 1.5 1.4 q w 0 5 10 mm scale detail x l p q a a 4 (a 3 ) a 1 a 2
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 12 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 11. handling information 11.1 moisture sensitivity 12. abbreviations 13. revision history table 10. moisture sensitivity level test methodology class jesd-22-a113 3 table 11. abbreviations acronym description 3gpp third generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel ldmos laterally diffused metal oxide semiconductor mmic monolithic microwave integrated circuit pa power amplifier par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency smd surface mounted devices vswr voltage standing wave ratio w-cdma wideband code division multiple access table 12. revision history document id release date data sheet status change notice supersedes BLM6G10-30_BLM6G10-30g v.2 20110301 product data sheet - blm6g10-3 0_BLM6G10-30g v.1 modifications: ? the title of the document has been changed ? table 1 on page 1 : the title of the table has been changed ? section 1.2 on page 1 : the frequency range has been changed where applicable ? figure 2 on page 3 : figure has been added ? table 6 on page 4 : the value of i dq2 has been changed ? figure 3 on page 5 : figure has been changed ? figure 4 on page 5 : figure has been changed ? figure 7 on page 6 : figure has been changed ? figure 9 on page 6 : figure has been changed ? section 8.4 on page 7 : section has been added ? section 9 on page 9 : section has been added BLM6G10-30_BLM6G10-30g v.1 20090828 objective data sheet - -
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 13 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 14.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 14.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLM6G10-30_BLM6G10-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 2 ? 1 march 2011 14 of 15 nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 14.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLM6G10-30; BLM6G10-30g w-cdma 860 mhz - 960 mhz power mmic ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 1 march 2011 document identifier: BLM6G10-30_BLM6G10-30g please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 16. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 2.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 application information. . . . . . . . . . . . . . . . . . . 4 8.1 ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.2 impedance information . . . . . . . . . . . . . . . . . . . 4 8.3 performance curves . . . . . . . . . . . . . . . . . . . . . 5 8.4 application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 9 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 11 handling information. . . . . . . . . . . . . . . . . . . . 12 11.1 moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 12 12 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 14.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15 contact information. . . . . . . . . . . . . . . . . . . . . 14 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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